Please use this identifier to cite or link to this item: http://thuvien.ued.udn.vn/handle/TVDHSPDN_123456789/45373
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dc.contributor.authorTrần Thị, Hải,...vi
dc.date.accessioned2018-05-24T08:08:09Z-
dc.date.available2018-05-24T08:08:09Z-
dc.date.issued2009vi
dc.identifier.citationCommunications in Physics Vol. 19, No 3(2009)vi
dc.identifier.urihttp://thuvien.ued.udn.vn/handle/TVDHSPDN_123456789/45373-
dc.language.isovivi
dc.subjectVật lý họcvi
dc.titleBand-bending Effects from Double-side Selective Doping on the Electronic Properties of Square Quantum Wells (QWs)vi
dc.typeArticlevi
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