Please use this identifier to cite or link to this item:
http://thuvien.ued.udn.vn/handle/TVDHSPDN_123456789/45373Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Trần Thị, Hải,... | vi |
| dc.date.accessioned | 2018-05-24T08:08:09Z | - |
| dc.date.available | 2018-05-24T08:08:09Z | - |
| dc.date.issued | 2009 | vi |
| dc.identifier.citation | Communications in Physics Vol. 19, No 3(2009) | vi |
| dc.identifier.uri | http://thuvien.ued.udn.vn/handle/TVDHSPDN_123456789/45373 | - |
| dc.language.iso | vi | vi |
| dc.subject | Vật lý học | vi |
| dc.title | Band-bending Effects from Double-side Selective Doping on the Electronic Properties of Square Quantum Wells (QWs) | vi |
| dc.type | Article | vi |
| Appears in Collections: | KH tự nhiên (TC) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 167-173_TC Vat ly_2009_V.19_So 3.pdf | 269.64 kB | Adobe PDF |  Sign in to read |
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